MICROX-an all-silicon technology for monolithic microwave integrated circuits

Author

Hanes, Maurice H. ; Agarwal, Anant K. ; O´Keeffe, T.W. ; Hobgood, H.M. ; Szedon, John R. ; Smith, T.J. ; Siergiej, R.R. ; McMullin, Paul G. ; Nathanson, H.C. ; Driver, Michael C. ; Thomas, R. Noel

Author_Institution

Westinghouse Sci. & Technol. Center, Pittsburgh, PA, USA

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

219

Lastpage

221

Abstract

An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent electrical isolation between devices, and low-loss microstrip lines. The concept, called MICROX (patent pending), is based on the SIMOX process, but uses very-high-resistivity (typically>10000 Omega -cm) silicon substrates, MICROX NMOS transistors of effective gate length 0.25 mu m give a maximum frequency of operation, f/sub max/, of 32 GHz and f/sub T/ of 23.6 GHz in large-periphery (4 mu m*50 mu m) devices with no correction for the parasitic effects of the pads. The measured minimum noise figure is 1.5 dB at 2 GHz with associated gain of 17.5 dB, an improvement over previously reported values for silicon FETs.<>

Keywords

MMIC; MOS integrated circuits; SIMOX; insulated gate field effect transistors; integrated circuit technology; solid-state microwave devices; 0.045 to 10 GHz; 0.25 micron; 1.5 dB; 10/sup 4/ ohmcm; 17.5 dB; 23.6 GHz; 32 GHz; MICROX NMOS transistors; SIMOX process; SOI approach; cutoff frequency; effective gate length; electrical isolation; junction-to-substrate capacitances; low-loss microstrip lines; maximum frequency of operation; minimum noise figure; monolithic microwave integrated circuits; very high resistivity Si substrates; Bipolar transistors; Capacitance; Circuits; FETs; Isolation technology; MOSFETs; Microstrip; Microwave devices; Microwave technology; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215173

Filename

215173