Characteristics of MOS capacitors of BF/sub 2/ or B implanted polysilicon gate with and without POCl/sub 3/ co-doped

Author

Hsieh, J.C. ; Fang, Y.K. ; Chen, C.W. ; Tsai, N.S. ; Lin, M.S. ; Tseng, F.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

222

Lastpage

224

Abstract

The characteristics of BF/sub 2/- or B-implanted polysilicon gate MOS capacitors with and without POCl/sub 3/ codoped were studied. It was found that the gate oxide thickness was increased very significantly with the number of high-temperature thermal cycles for BF/sub 2/-implanted polysilicon MOS capacitors, but this was not true for POCl/sub 3/-codoped polysilicon MOS capacitors. A model that interprets this phenomenon well was developed using the results of SIMS (secondary ion ion mass spectrometry) measurements.<>

Keywords

annealing; boron; boron compounds; elemental semiconductors; ion implantation; metal-insulator-semiconductor devices; phosphorus compounds; secondary ion mass spectra; semiconductor process modelling; silicon; MOS capacitors; SIMS; Si:B; Si:B,POCl/sub 3/; Si:BF/sub 2/; Si:BF/sub 2/,POCl/sub 3/; gate oxide thickness; high-temperature thermal cycles; ion implantation; model; polysilicon gate; Annealing; Conductivity; Doping; Electrical resistance measurement; Furnaces; MOS capacitors; Plasma measurements; Semiconductor process modeling; Temperature; Thermal degradation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215174

Filename

215174