Degradation of N/sub 2/O-annealed MOSFET characteristics in response to dynamic oxide stressing

Author

Chen, James C. ; Liu, Zhihong ; Krick, J.T. ; Ko, Ping K. ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

225

Lastpage

227

Abstract

The performance of n-MOSFETs with furnace N/sub 2/O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N/sub 2/O-annealed devices compared with that for devices with OX. In addition, a smaller V/sub t/ shift after stress was found for nitrided samples. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both G/sub m/ and D/sub it/ revealed a peak frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this.<>

Keywords

annealing; electric breakdown of solids; hole traps; insulated gate field effect transistors; nitridation; semiconductor device testing; annealing temperature; degradation; dynamic Fowler-Nordheim bipolar stress; dynamic oxide stressing; furnace N/sub 2/O annealed gate oxides; hole trapping/migration model; nMOSFET; nitrided samples; stressing frequency; time dependent dielectric breakdown; Annealing; Degradation; Frequency; Furnaces; Interface states; MOSFET circuits; Pulse measurements; Temperature; Thermal stresses; Thickness measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215175

Filename

215175