High-field-induced leakage in ultrathin N/sub 2/O oxides

Author

Yoon, G.W. ; Joshi, A.B. ; Kim, J. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

231

Lastpage

233

Abstract

Stress-induced leakage current (SILC) is studied in ultrathin ( approximately 50 AA) gate oxides grown in N/sub 2/O or O/sub 2/ ambient, using rapid thermal processing (N/sub 2/O oxide or control oxide, respectively). MOS capacitors with N/sub 2/O oxides exhibit much suppressed SILC compared to the control oxide for successive ramp-up, constant voltage DC, and AC (bipolar and unipolar) stresses. The mechanism for SILC is discussed, and the suppressed SILC in N/sub 2/O oxide is attributed to suppressed interface state generation due to nitrogen incorporation at the Si/SUO/sub 2/ interface during N/sub 2/O oxidation.<>

Keywords

leakage currents; metal-insulator-semiconductor devices; nitridation; oxidation; rapid thermal processing; semiconductor device testing; AC stress; MOS capacitors; Si-SiO/sub 2/; Si-SiO/sub x/N/sub y/; constant voltage DC stress; rapid thermal processing; stress induced leakage current; successive ramp-up; suppressed interface state generation; ultrathin N/sub 2/O oxides; Dielectrics; Interface states; Leakage current; MOS capacitors; Nitrogen; Oxidation; Rapid thermal processing; Stress control; Thermal stresses; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215177

Filename

215177