Title :
High-field-induced leakage in ultrathin N/sub 2/O oxides
Author :
Yoon, G.W. ; Joshi, A.B. ; Kim, J. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
Stress-induced leakage current (SILC) is studied in ultrathin ( approximately 50 AA) gate oxides grown in N/sub 2/O or O/sub 2/ ambient, using rapid thermal processing (N/sub 2/O oxide or control oxide, respectively). MOS capacitors with N/sub 2/O oxides exhibit much suppressed SILC compared to the control oxide for successive ramp-up, constant voltage DC, and AC (bipolar and unipolar) stresses. The mechanism for SILC is discussed, and the suppressed SILC in N/sub 2/O oxide is attributed to suppressed interface state generation due to nitrogen incorporation at the Si/SUO/sub 2/ interface during N/sub 2/O oxidation.<>
Keywords :
leakage currents; metal-insulator-semiconductor devices; nitridation; oxidation; rapid thermal processing; semiconductor device testing; AC stress; MOS capacitors; Si-SiO/sub 2/; Si-SiO/sub x/N/sub y/; constant voltage DC stress; rapid thermal processing; stress induced leakage current; successive ramp-up; suppressed interface state generation; ultrathin N/sub 2/O oxides; Dielectrics; Interface states; Leakage current; MOS capacitors; Nitrogen; Oxidation; Rapid thermal processing; Stress control; Thermal stresses; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
