Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs)

Author

Parke, Stephen A. ; Hu, Chenming ; Ko, Ping K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

234

Lastpage

236

Abstract

A hybrid mode of device operation, in which both bipolar and MOSFET currents flow simultaneously, has been experimentally investigated using quarter-micrometer-channel-length MOSFET´s which were fabricated on SIMOX silicon-on-insulator substrates. This mode of device operation is achieved by connecting the gate of a non-fully-depleted SOI MOSFET to the edges of its floating body. Both the maximum G/sub m/ and current drive at 1.5* higher than the MOSFET´s normal mode. Bipolar-junction-transistor (BJT)-like 60-mV/decade turn-off behavior is also achieved. This mode of operation is very promising for low-voltage, low-power, very-high-speed logic as well as for on-chip analog functions.<>

Keywords

SIMOX; bipolar transistors; insulated gate field effect transistors; 0.25 micron; 340 mS/mm; BJT like turn off behaviour; I-V characteristics; SIMOX; SOI MOSFET; bipolar FET hybrid mode operation; current drive; floating body edges; maximum transconductance; on-chip analog functions; subthreshold behaviour; very-high-speed logic; Insulation; Joining processes; Logic; Low voltage; MESFETs; MOSFETs; Silicon on insulator technology; Substrates; Transconductance; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215178

Filename

215178