The improvement of short-channel effects due to oxidation-induced boron redistribution for counter-implantation p-MOSFET´s

Author

Perng, Ruey-Kuen ; Lin, Pole-Shang

Author_Institution

Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

237

Lastpage

239

Abstract

Delayed appearance of short-channel effects in the threshold voltage falloff has been observed for counterimplantation p-MOSFETs. The phenomenon is attributed to the oxidation-induced boron redistribution along the channel. SUPREM-3 and MINIMOS-5 and the Orlowski method were used to quantitatively characterize this behavior. Quite good agreement between simulation and experimental data were obtained. It was found that the device characteristics of submicrometer counterimplanted p-MOSFETs are improved due to the effects of boron redistribution near the channel edge.<>

Keywords

boron; doping profiles; insulated gate field effect transistors; ion implantation; oxidation; semiconductor device models; semiconductor process modelling; MINIMOS-5; Orlowski method; SUPREM-3; Si:B-SiO/sub 2/; channel edge; counterimplantation pMOSFET, doping profiles; oxidation induced B redistribution; short-channel effects; simulation; subthreshold current; threshold voltage falloff; vertical channel profiles; Boron; CMOS process; CMOS technology; Delay effects; Doping profiles; Industrial electronics; Ion implantation; MOSFET circuits; Region 2; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215179

Filename

215179