Title :
1/f noise in hot-carrier damaged MOSFET´s: effects of oxide charge and interface traps
Author :
Tsai, Ming-Horn ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The 1/f noise in the drain current of hot-carrier damaged MOSFETs biased in weak inversion has been studied. By the use of a biased annealing treatment to simultaneously decrease the density of oxide trapped charge (N/sub ot/) and increase the density of interface traps (D/sub it/), the authors have separated the contributions of these two kinds of defects. The results clearly indicate that, while the low-frequency 1/f noise is correlated with N/sub ot/, the high-frequency 1/f noise is correlated with D/sub it/.<>
Keywords :
annealing; current fluctuations; hot carriers; insulated gate field effect transistors; interface electron states; random noise; semiconductor device noise; 1/f noise; NMOSFET; biased annealing treatment; drain current fluctuations; high-frequency 1/f noise; hot-carrier damaged MOSFETs; interface traps; low-frequency 1/f noise; oxide trapped charge; weak inversion; Annealing; Charge pumps; Fluctuations; Frequency; Hot carrier effects; Hot carriers; Low-frequency noise; MOSFET circuits; Petroleum; Semiconductor device noise;
Journal_Title :
Electron Device Letters, IEEE
