Title :
Stochastic geometry effects in MOS transistor
fDate :
8/1/1985 12:00:00 AM
Abstract :
The influence of random edge effects and oxide thickness variations on MOS transistor characteristics is investigated. The variance of the drain current is calculated as a function of the parameters of the stochastic geometry effects. Finally, the relation with the scaling down of the transistor dimensions is also included.
Keywords :
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; Capacitance; Conductivity; Equations; Fluctuations; Geometry; Large scale integration; MOS capacitors; MOSFETs; Stochastic processes; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1985.1052401
