InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer

Author

Fujita, Shinobu ; Noda, Takao ; Nozaki, Chiharu ; Ashizawa, Yasuo

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

14

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

259

Lastpage

261

Abstract

The authors have fabricated an InGaAs/InAlAs HEMT structure with a strained InGaP Schottky contact layer to achieve selective wet gate recess etching and to improve reliability for thermal stress. Strained In/sub 0.75/Ga/sub 0.25/P grown on InAlAs has been revealed to have sufficient Schottky barrier height for use as a gate contact. Threshold voltage standard deviation has been reduced to one fifth that of a conventional InGaAs/InAlAs HEMT, as a result of successful selective recess etching. After thermal treatment at 300 degrees C for 5 min, the drain current and transconductance did not change, while those of the conventional HEMT decreased by more than 10%.<>

Keywords

III-V semiconductors; Schottky effect; aluminium compounds; etching; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; reliability; 300 degC; 5 min; HEMT structure; In/sub 0.75/Ga/sub 0.25/P; InGaAs-InAlAs; Schottky barrier height; drain current; gate contact; selective wet gate recess etching; strained Schottky contact layer; thermal stress reliability; thermal treatment; transconductance; Dry etching; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; Schottky barriers; Thermal stresses; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215186

Filename

215186