• DocumentCode
    898877
  • Title

    Defect size variations and their effect on the critical area of VLSI devices

  • Author

    Ferris-Prabhu, Albert V.

  • Volume
    20
  • Issue
    4
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    878
  • Lastpage
    880
  • Abstract
    The effect on VLSI device yield of variations in the size of defects has not been widely recognized until recently, when the theory of critical areas and fault probabilities was developed. It is shown that assumptions regarding the defect size distribution can substantially affect the computed critical area.
  • Keywords
    Fault location; Short-circuit currents; VLSI; fault location; short-circuit currents; Circuit faults; Conductors; Distributed computing; Equations; Geometry; Insulation; Kernel; Semiconductor devices; Substrates; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1985.1052404
  • Filename
    1052404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898877