Title :
An emitter switched thyristor with base resistance control
Author :
Shekar, M.S. ; Nandakumar, M. ; Baliga, B.Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
An MOS-gated emitter-switched thyristor structure with base resistance control, which combines the best features of both the emitter-switched thyristor (EST) and the base-resistance-controlled thyristor (BRT), is reported. With this structure, it is possible to obtain turn-off (dynamic) current densities above the static latch-up current density of the parasitic thyristor in the EST, while preserving its unique current saturation capability. It has been experimentally demonstrated for 600 V forward blocking devices that the maximum controllable current density under dynamic conditions is a function of both the gate bias and the dimensions of the N/sup +/ floating emitter. Turn-off measurements have demonstrated that the new structure has a maximum controllable current density of over 2.5 times that for the EST structure without base resistance control.<>
Keywords :
current density; metal-insulator-semiconductor devices; thyristors; 600 V; MOS-gated emitter-switched thyristor; N/sup +/ floating emitter dimensions; base resistance control; current saturation capability; dynamic conditions; forward blocking devices; gate bias; static latch-up current density; turn off current density; Cathodes; Current density; Current measurement; Density measurement; Diversity reception; Electrical resistance measurement; Insulated gate bipolar transistors; MOSFET circuits; Thyristors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
