Large Stark shift of the interband transition in two-step quantum wells

Author

Chen, W.Q. ; Wang, S.M. ; Andersson, T.G.

Author_Institution

Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

14

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

286

Lastpage

288

Abstract

Large and near-linear Stark shifts of the electron-heavy-hole ground state excitonic transition were observed in photoluminescence (PL) measurements for a two-step quantum-well (TSQW) structure. The Stark shift was 40 meV while a corresponding square well shifted only 20 meV at a field of 70 kV/cm. The observed Stark shifts agreed well with calculations. The large Stark shift of the TSQW was achieved on a global-to-local state transition realized via tailor-made quantum well (QW) parameters. This structure is an ideal candidate for optoelectronic devices based on the quantum confined Stark effect (QCSE).<>

Keywords

III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; luminescence of inorganic solids; photoluminescence; semiconductor quantum wells; Al/sub 0.35/Ga/sub 0.65/As-Al/sub 0.1/Ga/sub 0.9/As-GaAs; Stark shift; electron-heavy-hole ground state excitonic transition; global-to-local state transition; interband transition; optoelectronic devices; photoluminescence; quantum confined Stark effect; two-step quantum wells; Energy measurement; Gallium arsenide; High speed optical techniques; Molecular beam epitaxial growth; Optoelectronic devices; Photoluminescence; Q measurement; Quantum wells; Stark effect; Stationary state;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215200

Filename

215200