• DocumentCode
    898983
  • Title

    Domain stability in the Gunn effect

  • Author

    Carroll, J.E.

  • Author_Institution
    Services Electronics Research Laboratory, Harlow, UK
  • Volume
    1
  • Issue
    7
  • fYear
    1965
  • fDate
    9/1/1965 12:00:00 AM
  • Firstpage
    189
  • Lastpage
    190
  • Abstract
    The present theoretical and experimental knowledge of the high-field domain in the Gunn effect gives conflicting result. The letter shows that these can be reconciled by a modification to the published reasoning about domain formation.
  • Keywords
    Gunn effect; III-V semiconductors; gallium arsenide; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19650174
  • Filename
    4231387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898983