High-performance sub-quarter-micrometer PMOSFET´s on SOI

Author

Assaderaghi, Fariborz ; Parke, Stephen ; King, Joe ; Chen, Jian ; Ko, Ping Keung ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ.,. Berkeley, CA, USA

Volume

14

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

298

Lastpage

300

Abstract

PMOS transistors with effective channel lengths down to 0.15 mu m have been fabricated on silicon-on-insulator (SOI) films. Gate oxide thicknesses of 5.5 and 10 nm are used. These P/sup +/ gate PMOS devices exhibit excellent short-channel behavior, low-source-drain resistance, and remarkably large current drive and transconductance. for T/sub ox/=5.5 nm, saturation transconductances of 274 mS/mm at 300 K and 352 mS/mm at 80 K are achieved, which are the highest reported values for this oxide thickness. The result is attributed to low series resistance, forward-bias body effect, and the reduction of body charge effect.<>

Keywords

SIMOX; insulated gate field effect transistors; 0.15 micron; 10 nm; 274 mS/mm; 300 K; 352 mS/mm; 5.5 nm; 80 K; P/sup +/ gate PMOS; PMOS transistors; SIMOX wafer; SOI PMOSFET; Si-SiO/sub 2/; body charge effect reduction; channel lengths; current drive; forward-bias body effect; gate oxide thickness; low series resistance; low-source-drain resistance; saturation transconductances; short-channel behavior; transconductance; Doping; Immune system; Implants; MOS devices; MOSFET circuits; Parasitic capacitance; Semiconductor films; Silicon on insulator technology; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215204

Filename

215204