Lasing oscillations in the negative differential resistance region of the double-heterostructure optoelectronic switch

Author

Sargood, S.K. ; Docter, D.P. ; Evaldsson, P.A. ; Taylor, G.W.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

5

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

497

Lastpage

499

Abstract

In the characterization of the double-heterostructure optoelectronic switch (DOES) in the negative differential resistance (NDR) region, current oscillations are observed. The oscillations arise from the natural resonance of the NDR in the test circuit and produce a corresponding optical output. The authors observe these oscillations in DOES lasers with broad area threshold densities of 78 A/cm/sup 2/ and threshold currents for 10 mu m stripes of 15 mA. The optical output during the oscillations is laser emission since the current easily exceeds the laser threshold. The average output power due to the oscillations exceeds the CW power corresponding to the DC current by more than an order of magnitude.<>

Keywords

optical switches; oscillations; semiconductor lasers; semiconductor switches; 10 micron; 15 mA; CW power; DC current; DOES lasers; average output power; broad area threshold densities; current oscillations; double-heterostructure optoelectronic switch; laser emission; laser threshold; lasing oscillations; natural resonance; negative differential resistance region; optical output; test circuit; threshold currents; Circuit testing; Current measurement; Laser theory; Optical bistability; Optical devices; Optical switches; Optimized production technology; Stimulated emission; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.215260

Filename

215260