Title :
High-efficiency waveguide-coupled lambda =1.3 mu m In/sub x/Ga/sub 1-x/As/GaAs MSM detector exhibiting large extinction ratios at L and X band
Author :
Ng, W. ; Narayanan, A. ; Hayes, R.R. ; Persechini, D. ; Yap, D.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
5/1/1993 12:00:00 AM
Abstract :
The design and fabrication of a 1.3- mu m waveguide-coupled strained-layer In/sub x/Ga/sub 1-x/As/GaAs MSM detector with an optimized active layer thickness is reported. For 100- mu m-long devices, a responsivity of 0.58 mA/mW is observed. Using the detector as an optoelectronic switch, on/off ratios better than 40 dB were achieved at L and X band.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; 1.3 micron; 100 micron; IR; InGaAs-GaAs; L band; MSM detector; MSM detector design; MSM detector fabrication; X band; large extinction ratios; on/off ratios; optimized active layer thickness; optoelectronic switch; responsivity; semiconductors; strained-layer; waveguide-coupled; Detectors; Electrons; Gallium arsenide; Indium gallium arsenide; Microwave antenna arrays; Optical device fabrication; Optical receivers; Optical waveguides; Photodetectors; Switches;
Journal_Title :
Photonics Technology Letters, IEEE
