• DocumentCode
    899544
  • Title

    Discretization error in MOSFET device simulation

  • Author

    Tanimoto, Hiroyoshi ; Shigyo, Naoyuki

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    11
  • Issue
    7
  • fYear
    1992
  • fDate
    7/1/1992 12:00:00 AM
  • Firstpage
    921
  • Lastpage
    925
  • Abstract
    The discretization error in MOSFET device simulation caused by a coarse grid is discussed. Delaunay and Voronoi discretization grids are used to demonstrate the discretization error. It is possible to clarify the discretization error by using these geometrically complementary grids. An error caused by a coarse grid in the subthreshold region originates from an inaccurate rectangular integral of the carrier density. For the Delaunay grid, the calculated inversion carrier density for a coarse grid is overestimated. In contrast, for the Voronoi grid, the inversion carrier density is underestimated. The equations for estimating the error in the subthreshold region are proposed. In the strong inversion region, the error for the Delaunay grid is smaller than the error in the subthreshold region. On the other hand, for the Voronoi grid, the error is large, even in the strong inversion region. The error for the Voronoi grid in the strong inversion region is caused by a quasi-capacitance originating from discretization
  • Keywords
    digital simulation; insulated gate field effect transistors; semiconductor device models; Delaunay grid; MOSFET device simulation; Voronoi grid; carrier density; coarse grid; discretization error; discretization grids; geometrically complementary grids; inaccurate rectangular integral; inversion carrier density; quasi-capacitance; strong inversion region; subthreshold region; Capacitance; Charge carrier density; Electromagnetic fields; Electrons; Integral equations; MOSFET circuits; Taylor series; Ultra large scale integration; Upper bound; Voltage;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.144856
  • Filename
    144856