Matching of GaAs power FETs using a large-signal modelling technique

Author

Holden, A.J. ; Debney, B.T. ; King, J.P. ; Metcalfe, J.G. ; Oxley, C.H.

Author_Institution

Plesey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK

Volume

133

Issue

5

fYear

1986

fDate

10/1/1986 12:00:00 AM

Firstpage

399

Lastpage

404

Abstract

A large-signal modelling program based on fundamental frequency harmonic balance is described. The model uses nonlinear elements derived from bias-dependent S-parameter measurements and proves to be computationally efficient and suitable for use in modelling power FETs. Simulated output powers and gains as a function of output impedance are presented for the Plessey 4820 power FET. Results from a narrow-band prematched module designed using the large-signal model are presented showing output power within 0.5 dB of the theoretical maximum in the 7.9 to 8.4 Ghz band. This was achieved without the need for any fine tuning.

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; power transistors; semiconductor device models; solid-state microwave devices; 7.9 to 8.4 GHz; 7.9 to 8.4 GHz band; GaAs; Plessey 4820 power FET; bias-dependent S-parameter measurements; fundamental frequency harmonic balance; gains; large-signal modelling program; matching; narrow-band prematched module; nonlinear elements; output impedance; output powers;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings H

Publisher

iet

ISSN

0950-107X

Type

jour

DOI

10.1049/ip-h-2.1986.0071

Filename

4642940