Title :
Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates
Author :
Thomas, Paul ; Filmer, Matthew ; Gaur, Abhinav ; Pawlik, David J. ; Romanczyk, Brian ; Marini, Enri ; Rommel, Sean L. ; Majumdar, Kausik ; Wei-Yip Loh ; Man Hoi Wong ; Hobbs, Chris ; Bhatnagar, Kunal ; Contreras-Guerrero, Rocio ; Droopad, Ravi
Author_Institution :
Dept. of Electr. & Microelectron. Eng., Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
In0.53Ga0.47As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In0.53Ga0.47As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III-V on Si sample and the control that perform similarly below 8.6 × 10-10 cm-2. The existence of a critical device area suggests the potential to utilize III-V on Si for other deeply scaled tunnel devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; tunnel diodes; Esaki tunnel diodes; In0.53Ga0.47As-InP; In0.53Ga0.47As-Si; graded buffer; molecular beam epitaxy; peak-to-valley ratio; Doping; III-V semiconductor materials; Indium phosphide; Junctions; Silicon; Substrates; Temperature measurement; Esaki diode; III-V on Si; III???V on Si; excess current; negative differential resistance (NDR); tunnel junction; tunnel junction.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2445731
