• DocumentCode
    8996
  • Title

    Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates

  • Author

    Thomas, Paul ; Filmer, Matthew ; Gaur, Abhinav ; Pawlik, David J. ; Romanczyk, Brian ; Marini, Enri ; Rommel, Sean L. ; Majumdar, Kausik ; Wei-Yip Loh ; Man Hoi Wong ; Hobbs, Chris ; Bhatnagar, Kunal ; Contreras-Guerrero, Rocio ; Droopad, Ravi

  • Author_Institution
    Dept. of Electr. & Microelectron. Eng., Rochester Inst. of Technol., Rochester, NY, USA
  • Volume
    62
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    2450
  • Lastpage
    2456
  • Abstract
    In0.53Ga0.47As Esaki tunnel diodes grown by molecular beam epitaxy on an Si substrate via a graded buffer and control In0.53Ga0.47As Esaki tunnel diodes grown on an InP substrate are compared in this paper. Statistics are used as a tool to show peak-to-valley ratio for the III-V on Si sample and the control that perform similarly below 8.6 × 10-10 cm-2. The existence of a critical device area suggests the potential to utilize III-V on Si for other deeply scaled tunnel devices.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; tunnel diodes; Esaki tunnel diodes; In0.53Ga0.47As-InP; In0.53Ga0.47As-Si; graded buffer; molecular beam epitaxy; peak-to-valley ratio; Doping; III-V semiconductor materials; Indium phosphide; Junctions; Silicon; Substrates; Temperature measurement; Esaki diode; III-V on Si; III???V on Si; excess current; negative differential resistance (NDR); tunnel junction; tunnel junction.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2445731
  • Filename
    7154465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=8996