DocumentCode
899637
Title
Design of Full Band UWB Common-Gate LNA
Author
Shim, Yuna ; Kim, Chang-Wan ; Lee, Jeongseon ; Lee, Sang-Gug
Author_Institution
Inf. & Commun. Univ., Daejeon
Volume
17
Issue
10
fYear
2007
Firstpage
721
Lastpage
723
Abstract
A two-stage, common-gate in cascade with cascode, ultra wideband low noise amplifier (LNA) topology is proposed for 3.1 to 10.5 GHz full band application. The common-gate first stage is adopted and optimized for low noise figure (NF) at high frequencies. The LNA implemented in 0.18 mum CMOS shows more than 10 dB input return loss, maximum gain of 16 dB, and NF of 3.8~4.0 dB over the full frequency band while dissipating 5.3 mA from 1.8 V supply.
Keywords
CMOS integrated circuits; MMIC amplifiers; low noise amplifiers; ultra wideband technology; wideband amplifiers; CMOS; cascode; current 5.3 mA; frequency 3.1 GHz to 10.5 GHz; full band UWB common-gate LNA; gain; gain 10 dB; gain 16 dB; gain 3.8 dB to 4 dB; noise figure; size 0.18 mum; ultra wideband low noise amplifier topology; voltage 1.8 V; Broadband amplifiers; CMOS technology; Circuit noise; Frequency; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Topology; Ultra wideband technology; Common-gate; low noise amplifier (LNA); ultra wideband (UWB);
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2007.905633
Filename
4336148
Link To Document