New method for the analysis of dual-gate MESFET mixers

Author

Dreifuss, J. ; Madjar, A. ; Bar-lev, A.

Author_Institution

Government of Israel, Haifa, Israel

Volume

134

Issue

1

fYear

1987

fDate

2/1/1987 12:00:00 AM

Firstpage

11

Lastpage

15

Abstract

A method for the analysis of a microwave mixer based on a dual-gate MESFET is presented. The method extends a previously published analysis technique for a single-gate MESFET mixer by treating the circuit as a threeport network. The device is described by a complete mathematical model and the harmonic balance technique is utilised for the large-signal analysis stage. This results in a relatively fast program. The method is demonstrated by applying it to the simulation of a mixer based on a Raytheon transistor RDX832 for which device data was available. The mixer was constructed and its experimentally obtained performance results show good agreement between the simulated and the measured conversion gain values through a wide range of local-oscillator input power.

Keywords

Schottky gate field effect transistors; mixers (circuits); multiport networks; network analysis; semiconductor device models; solid-state microwave circuits; Raytheon transistor RDX832; conversion gain; dual-gate MESFET mixers; harmonic balance technique; large-signal analysis stage; local-oscillator input power; mathematical model; micro-wave mixer; three-port network;

fLanguage

English

Journal_Title

Microwaves, Antennas and Propagation, IEE Proceedings H

Publisher

iet

ISSN

0950-107X

Type

jour

DOI

10.1049/ip-h-2.1987.0004

Filename

4642961