• DocumentCode
    899885
  • Title

    Stimulated emission at 300°K and simultaneous lasing at two wavelengths in epitaxial AlxGal-xAs injection lasers

  • Author

    Kressel, H. ; Hawrylo, F.Z.

  • Volume
    56
  • Issue
    9
  • fYear
    1968
  • Firstpage
    1598
  • Lastpage
    1599
  • Abstract
    Efficient room temperature injection lasers have been fabricated with AlxGa1-xAs by use of liquid phase epitaxy. Simultaneous lasing at wavelengths separated by more than 1000 Å has been observed at 100°K and below. The wavelengths and their separation may be controlled by process variations.
  • Keywords
    Diodes; Electrons; Epitaxial growth; Gallium arsenide; Geometry; Magnetic fields; Stimulated emission; Temperature; Threshold current; Zinc;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6661
  • Filename
    1448591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=899885