Title :
Stimulated emission at 300°K and simultaneous lasing at two wavelengths in epitaxial AlxGal-xAs injection lasers
Author :
Kressel, H. ; Hawrylo, F.Z.
Abstract :
Efficient room temperature injection lasers have been fabricated with AlxGa1-xAs by use of liquid phase epitaxy. Simultaneous lasing at wavelengths separated by more than 1000 Å has been observed at 100°K and below. The wavelengths and their separation may be controlled by process variations.
Keywords :
Diodes; Electrons; Epitaxial growth; Gallium arsenide; Geometry; Magnetic fields; Stimulated emission; Temperature; Threshold current; Zinc;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6661
