DocumentCode
900045
Title
Gallium arsenide-a new generation of integrated circuits
Author
Morgan, D.V.
Author_Institution
Wales Univ., Swansea, UK
Volume
34
Issue
8
fYear
1988
fDate
9/15/1988 12:00:00 AM
Firstpage
315
Lastpage
319
Abstract
Since the early days of semiconductor technology, a number of different materials have been studied with a view to investigating phenomena that may lead to significant new devices and ICs. Of all the new materials, the one that has received most attention to date is gallium arsenide, together with some of its closely related binary, ternary and quaternary compounds. After silicon, gallium arsenide is now regarded as the second most important electronic material. To understand the reason for this, the authors identify some of the special properties which make its performance superior
Keywords
III-V semiconductors; gallium arsenide; integrated circuits; GaAs; ICs; Si; binary compounds; electronic material; integrated circuits; performance; quaternary compounds; semiconductor devices; semiconductor technology; ternary compounds;
fLanguage
English
Journal_Title
IEE Review
Publisher
iet
ISSN
0953-5683
Type
jour
Filename
215418
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