• DocumentCode
    900045
  • Title

    Gallium arsenide-a new generation of integrated circuits

  • Author

    Morgan, D.V.

  • Author_Institution
    Wales Univ., Swansea, UK
  • Volume
    34
  • Issue
    8
  • fYear
    1988
  • fDate
    9/15/1988 12:00:00 AM
  • Firstpage
    315
  • Lastpage
    319
  • Abstract
    Since the early days of semiconductor technology, a number of different materials have been studied with a view to investigating phenomena that may lead to significant new devices and ICs. Of all the new materials, the one that has received most attention to date is gallium arsenide, together with some of its closely related binary, ternary and quaternary compounds. After silicon, gallium arsenide is now regarded as the second most important electronic material. To understand the reason for this, the authors identify some of the special properties which make its performance superior
  • Keywords
    III-V semiconductors; gallium arsenide; integrated circuits; GaAs; ICs; Si; binary compounds; electronic material; integrated circuits; performance; quaternary compounds; semiconductor devices; semiconductor technology; ternary compounds;
  • fLanguage
    English
  • Journal_Title
    IEE Review
  • Publisher
    iet
  • ISSN
    0953-5683
  • Type

    jour

  • Filename
    215418