Title :
Improved photoemitters using GaAs and InGaAs
Author :
Uebbing, J.J. ; Bell, R.L.
Abstract :
A luminous sensitivity of 900 µA/lm in a GaAs-Cs-O photocathode, and a photothreshold of 1.16 eV in an InGaAs photocathode with Cs-O or Cs-H2O surface layers, are reported.
Keywords :
Anisotropic magnetoresistance; Cathodes; Coatings; Doping; Gallium arsenide; Indium gallium arsenide; Optical resonators; Photonic band gap; Polarization; Surface treatment;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1968.6682
