• DocumentCode
    900188
  • Title

    Planar resonator and integrated oscillator using magnetostatic waves

  • Author

    Kinoshita, Yasuaki ; Kubota, Sadami ; Takeda, Shigeru ; Nakagoshi, Arata

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    37
  • Issue
    5
  • fYear
    1990
  • Firstpage
    457
  • Lastpage
    463
  • Abstract
    A simple planar resonator using a magnetostatic wave (MSW) excited by aluminum finger electrodes with two bonding pads was realized on YIG/GGG (yttrium-iron-garnet film on a gadolinium-gallium-garnet crystal) substrate with two reflection edges. The tunable MSW resonator chip (2 mm*5 mm) exhibited a sharp notch filter response, as deep as 20-35 dB, and a high loaded Q up to 2000, which was tunable over the microwave frequency range from 2 to 4 GHz. A small tunable oscillator (8 cm/sup 3/) was experimentally demonstrated using the MSW planar resonator and a silicon bipolar transistor integrated on a ceramic microwave circuit substrate. Microwave oscillation with spectral purity, at the same level as that of YIG sphere technology, was observed at 3 GHz. The experimental results indicate the technical areas where improvement must be made to realize a practical oscillator configuration.<>
  • Keywords
    crystal resonators; magnetostatic wave devices; microwave oscillators; 2 to 4 GHz; Al finger electrodes; GdGG crystal; GdGa5O12; Si bipolar transistor; YFe5O12; YIG film; bonding pads; ceramic microwave circuit substrate; integrated oscillator; magnetostatic waves; microwave frequency range; microwave oscillation; planar resonator; sharp notch filter response; small tunable oscillator; spectral purity; tunable magnetostatic wave resonator chip; two reflection edges; Aluminum; Bonding; Electrodes; Fingers; Magnetic separation; Magnetostatic waves; Microwave oscillators; Substrates; Tunable circuits and devices; Yttrium;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/58.105252
  • Filename
    105252