Title :
Octave Bandwidth Adjustable SPDT Power Switch Using p-i-n Diode-Terminated Stubs (Correspondence)
Author :
Toussaint, H.-N. ; Hoffman, Ryan
Abstract :
A new two-diode single-pole double-throw (SPDT) power-switch with the operating frequency adjustable within one octave is presented. An experimental model of the switch showed frequency adjustments in narrow bandwidth operation between 0.65 and 1.3 GHz. Frequency adjustment is made by appropriately short-circuiting a transmission line. Using thin-film microstrip lines, the switch was buitt on a 50-mil-thick 1-in by 1-in A1/sub 2/O/sub 3/ ceramic substrate. Switching speed is 100 to 300 ns; power handling capability is 1.5-kW peak power at 1-percent duty factor.
Keywords :
Bandwidth; Ceramics; Frequency; Microstrip; P-i-n diodes; PIN photodiodes; Power transmission lines; Substrates; Switches; Transistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1971.1127597
