DocumentCode
900246
Title
Octave Bandwidth Adjustable SPDT Power Switch Using p-i-n Diode-Terminated Stubs (Correspondence)
Author
Toussaint, H.-N. ; Hoffman, Ryan
Volume
19
Issue
7
fYear
1971
Firstpage
657
Lastpage
659
Abstract
A new two-diode single-pole double-throw (SPDT) power-switch with the operating frequency adjustable within one octave is presented. An experimental model of the switch showed frequency adjustments in narrow bandwidth operation between 0.65 and 1.3 GHz. Frequency adjustment is made by appropriately short-circuiting a transmission line. Using thin-film microstrip lines, the switch was buitt on a 50-mil-thick 1-in by 1-in A1/sub 2/O/sub 3/ ceramic substrate. Switching speed is 100 to 300 ns; power handling capability is 1.5-kW peak power at 1-percent duty factor.
Keywords
Bandwidth; Ceramics; Frequency; Microstrip; P-i-n diodes; PIN photodiodes; Power transmission lines; Substrates; Switches; Transistors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1971.1127597
Filename
1127597
Link To Document