Title :
Design of high-Q integrated junction capacitors
Author :
Weisen, Chen ; Straver, Wil G.M. ; Nordholt, Ernst H.
fDate :
4/1/1986 12:00:00 AM
Abstract :
A new interdigitated high-Q integrated junction capacitor structure in conventional bipolar processes is described. The base contact metal extends over almost the entire structure, thereby forming an additional MOS capacitance and maximizing the total capacitance per unit area.
Keywords :
Capacitors; Integrated circuit technology; Q-factor; capacitors; integrated circuit technology; CMOS logic circuits; CMOS technology; Capacitors; Circuit simulation; Clocks; Logic circuits; Logic design; MOS devices; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1986.1052531
