DocumentCode
900330
Title
Design of high-Q integrated junction capacitors
Author
Weisen, Chen ; Straver, Wil G.M. ; Nordholt, Ernst H.
Volume
21
Issue
2
fYear
1986
fDate
4/1/1986 12:00:00 AM
Firstpage
369
Lastpage
372
Abstract
A new interdigitated high-Q integrated junction capacitor structure in conventional bipolar processes is described. The base contact metal extends over almost the entire structure, thereby forming an additional MOS capacitance and maximizing the total capacitance per unit area.
Keywords
Capacitors; Integrated circuit technology; Q-factor; capacitors; integrated circuit technology; CMOS logic circuits; CMOS technology; Capacitors; Circuit simulation; Clocks; Logic circuits; Logic design; MOS devices; Switches; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1986.1052531
Filename
1052531
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