• DocumentCode
    900422
  • Title

    Electrooptic effect in CdTe at 23.35 and 27.95 microns

  • Author

    Johnson, C.J.

  • Volume
    56
  • Issue
    10
  • fYear
    1968
  • Firstpage
    1719
  • Lastpage
    1720
  • Abstract
    The unlamped electrooptic coefficient r41of high-purity CdTe has been measured at 23.35 and 27.95 micros in the far infrared. The values obtained for n03r41are 9.4 × 10-11m/V at 23.35 µ and 8.1 × 10-11m/V at 27.95 µ. Using previously reported values for n0, the electrooptic coefficients are found to be 5.5 × 10-12m/V at 23.35 µ and 5.0 × 10-12m/V at 27.95 µ. These measurements extend the region of observed electrooptic effect from 16 µ, previously obtained using GaAs, to 28 µ using CdTe.
  • Keywords
    Attenuators; Circuits; Distortion measurement; Electrooptic effects; FETs; Frequency; Harmonic distortion; Impedance; Interference; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6711
  • Filename
    1448641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=900422