DocumentCode :
900422
Title :
Electrooptic effect in CdTe at 23.35 and 27.95 microns
Author :
Johnson, C.J.
Volume :
56
Issue :
10
fYear :
1968
Firstpage :
1719
Lastpage :
1720
Abstract :
The unlamped electrooptic coefficient r41of high-purity CdTe has been measured at 23.35 and 27.95 micros in the far infrared. The values obtained for n03r41are 9.4 × 10-11m/V at 23.35 µ and 8.1 × 10-11m/V at 27.95 µ. Using previously reported values for n0, the electrooptic coefficients are found to be 5.5 × 10-12m/V at 23.35 µ and 5.0 × 10-12m/V at 27.95 µ. These measurements extend the region of observed electrooptic effect from 16 µ, previously obtained using GaAs, to 28 µ using CdTe.
Keywords :
Attenuators; Circuits; Distortion measurement; Electrooptic effects; FETs; Frequency; Harmonic distortion; Impedance; Interference; Voltage control;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6711
Filename :
1448641
Link To Document :
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