Title :
Investigation of the Radiation Resistivity of Large Scale Integrated CMOS-RAM´s
Author :
Loidl, Alfred ; Zwick, Richard
Author_Institution :
Max-Planck-Institut fÿr Aeronomie D-3411 Katlenburg-Lindau 3 Federal Republic of Germany
fDate :
4/1/1982 12:00:00 AM
Abstract :
The investigations we report here were intended to show if LSI-CMOS-RAM´s are able to survive the passage through the radiation belt of Jupiter during the fly-by phase of the ISPM-mission. Attempts were made to obtain samples of all the 1024 word à 4 Bit and 2048 word à 8 Bit RAM´s currently on the market. There are still no CMOS-RAM´s commercially available that survive this degree of irradiation. We found considerably different radiation resistancy depending upon the mode of usage of the CMOS-RAM´s. The best procedure is to switch them off during fly-by phase.
Keywords :
Aluminum; Belts; Circuits; Conductivity; Electrons; Jupiter; Large scale integration; Power supplies; Switches; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1982.4336312