• DocumentCode
    900436
  • Title

    Investigation of the Radiation Resistivity of Large Scale Integrated CMOS-RAM´s

  • Author

    Loidl, Alfred ; Zwick, Richard

  • Author_Institution
    Max-Planck-Institut fÿr Aeronomie D-3411 Katlenburg-Lindau 3 Federal Republic of Germany
  • Volume
    29
  • Issue
    2
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    1046
  • Lastpage
    1050
  • Abstract
    The investigations we report here were intended to show if LSI-CMOS-RAM´s are able to survive the passage through the radiation belt of Jupiter during the fly-by phase of the ISPM-mission. Attempts were made to obtain samples of all the 1024 word × 4 Bit and 2048 word × 8 Bit RAM´s currently on the market. There are still no CMOS-RAM´s commercially available that survive this degree of irradiation. We found considerably different radiation resistancy depending upon the mode of usage of the CMOS-RAM´s. The best procedure is to switch them off during fly-by phase.
  • Keywords
    Aluminum; Belts; Circuits; Conductivity; Electrons; Jupiter; Large scale integration; Power supplies; Switches; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1982.4336312
  • Filename
    4336312