DocumentCode :
900477
Title :
Large-signal transient effect in avalanche diodes
Author :
Penfield, P., Jr.
Volume :
56
Issue :
10
fYear :
1968
Firstpage :
1727
Lastpage :
1728
Abstract :
A nonlinear transient effect in avalanche diodes is proposed. In this effect, carriers in a bunch sweep across the depletion region, ionizing as they go, and leaving behind an electric field substantially lower than the initial field, and too low to allow further ionization.
Keywords :
Charge carrier processes; Cutoff frequency; Doping; Electron mobility; Ionization; P-i-n diodes; Semiconductor diodes; Silicon; Space charge; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1968.6717
Filename :
1448647
Link To Document :
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