Thermal Characterization of Electrically Injected Thin-Film InGaAsP Microdisk Lasers on Si

Author

Van Campenhout, Joris ; Rojo-Romeo, Pedro ; Van Thourhout, Dries ; Seassal, Christian ; Regreny, Philippe ; Di Cioccio, Lea ; Fedeli, Jean-Marc ; Baets, Roel

Author_Institution

Ghent Univ., Ghent

Volume

25

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1543

Lastpage

1548

Abstract

We have performed a numerical and experimental analysis of the thermal behavior of electrically injected microdisk lasers that are defined in an InGaAsP-based thin film bonded on top of a silicon wafer. Both the turn-on as well as the pulsed-regime temperature evolution in the lasing region was simulated using the finite-element method. The simulation results are in good agreement with experimental data, which was extracted from the broadening of the time-averaged emission spectra. Lasing at room temperature was only possible in pulsed regime due to the high thermal resistance (10 K/mW). Some strategies to decrease the thermal resistance of the microdisk lasers are proposed and discussed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microdisc lasers; semiconductor thin films; thermal conductivity; thin film devices; InGaAsP; InGaAsP-based thin film; Si; electrically injected microdisk lasers; finite-element method; room temperature; temperature 293 K to 298 K; thermal resistance; time-averaged emission spectra; Integrated optics; Optical films; Optical pulses; Optical waveguides; Semiconductor thin films; Silicon; Temperature; Thermal resistance; Wafer bonding; Waveguide lasers; Heterogeneous integration; InGaAsP; Si; integrated optics; microdisk laser; thermal characterization;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2007.895552

Filename

4232490