DocumentCode
900824
Title
Interval estimates for yield modeling
Author
Winter, C.L. ; Cook, W.L.
Volume
21
Issue
4
fYear
1986
fDate
8/1/1986 12:00:00 AM
Firstpage
590
Lastpage
591
Abstract
Follows statistical convention by calling estimates point estimates. Defect density is a random phenomenon; thus a function of defect density, namely yield, will also be a random variable. An analysis is proposed of the yield model that allows calculation of interval bounds for yield, based on flexible defect models. An examination is also made of the interval estimates for yield from an individual wafer, and the confidence intervals for average yield for a given type of wafer.
Keywords
Monolithic integrated circuits; Semiconductor device models; monolithic integrated circuits; semiconductor device models; Circuit faults; Circuit synthesis; Electrons; Integrated circuit yield; Mathematics; Operational amplifiers; Random variables; Semiconductor device modeling; Temperature; Yield estimation;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1986.1052578
Filename
1052578
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