Title :
Interval estimates for yield modeling
Author :
Winter, C.L. ; Cook, W.L.
fDate :
8/1/1986 12:00:00 AM
Abstract :
Follows statistical convention by calling estimates point estimates. Defect density is a random phenomenon; thus a function of defect density, namely yield, will also be a random variable. An analysis is proposed of the yield model that allows calculation of interval bounds for yield, based on flexible defect models. An examination is also made of the interval estimates for yield from an individual wafer, and the confidence intervals for average yield for a given type of wafer.
Keywords :
Monolithic integrated circuits; Semiconductor device models; monolithic integrated circuits; semiconductor device models; Circuit faults; Circuit synthesis; Electrons; Integrated circuit yield; Mathematics; Operational amplifiers; Random variables; Semiconductor device modeling; Temperature; Yield estimation;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1986.1052578
