• DocumentCode
    900849
  • Title

    Properties of Microstrip Line on Si-SiO2 System

  • Author

    Hasegawa, H. ; Furukawa, M. ; Yanai, H.

  • Volume
    19
  • Issue
    11
  • fYear
    1971
  • Firstpage
    869
  • Lastpage
    881
  • Abstract
    A parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment. The experiment has been performed over wide ranges of frequency, substrate resistivity, and strip width. Existence of three types of fundamental modes is concluded and the condition for the appearance of each mode is clarified. In particular, the slow-wave mode is found to propagate within the resistivity-frequency range suited to the monolithic circuit technology, and its propagation mechanism is discussed. Approximate analysis of the fringing effect is also made for the slow-wave mode.
  • Keywords
    Capacitance; Couplings; Dielectric substrates; Dielectric thin films; Microstrip; Microwave theory and techniques; Multiconductor transmission lines; Power transmission lines; Strips; Transmission line theory;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1971.1127658
  • Filename
    1127658
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=900849