MOSFET global modeling for deep submicron devices with a modified BSIM1 SPICE model

Author

Imam, M.A. ; Osman, M.A. ; Osman, A.A.

Author_Institution

Micron Technol. Inc., Boise, ID, USA

Volume

15

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

446

Lastpage

451

Abstract

A modified Berkeley short-channel IGFET model (BSIM1) has been developed to accurately model the I-V characteristics and circuit performance of deep submicron MOSFET devices. The improved model provides a simple and more efficient parameter acquisition procedure for MOSFET global modeling in comparison to the original BSIM1 model. The procedure for extracting the global geometry scalable model parameters is described. The extraction procedure provides a decoupling between DC and AC modeling resulting in more accurate time-domain circuit simulations. The proposed modeling procedure eliminates the negative conductance problem experienced in the original BSIM1. The validity of the model is supported by comparisons between measured and simulated results. The focus of this paper is on the digital applications of the BSIM1 SPICE model

Keywords

MOSFET; SPICE; circuit analysis computing; integrated circuit modelling; semiconductor device models; Berkeley short-channel IGFET model; I-V characteristics; MOSFET global modeling; circuit performance; deep submicron devices; digital applications; global geometry scalable model parameters; modified BSIM1 SPICE model; parameter acquisition procedure; time-domain circuit simulations; Circuit faults; Circuit simulation; Circuit synthesis; Circuit testing; Delay; Inverters; MOSFET circuits; Robustness; SPICE; Sufficient conditions;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.494709

Filename

494709