• DocumentCode
    901116
  • Title

    Interface-State Generation in Thick SiO2 Layers

  • Author

    Boesch, Harold E., Jr.

  • Author_Institution
    U. S. Army Electronics Research and Development Command Harry Diamond Laboratories 2800 Powder Mill Road Adelphi, Maryland 20783
  • Volume
    29
  • Issue
    6
  • fYear
    1982
  • Firstpage
    1445
  • Lastpage
    1451
  • Abstract
    Evidence is presented that interface states are produced by radiation in some MOS structures with thick SiO2 layers (e.g., field oxides) by a mechanism different from the slow two-stage process previously identified in thinner radiation-hardened gate oxides. Production of interface states by the new process occurs promptly after irradiation, is independent of oxide field and polarity, and takes place with nearequal efficiency at room temperature and 77 K.
  • Keywords
    Capacitance measurement; Capacitance-voltage characteristics; Interface states; Linear particle accelerator; MOS capacitors; Nuclear power generation; Performance evaluation; Production; Pulse measurements; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1982.4336384
  • Filename
    4336384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901116