A 19-ns 250-mW CMOS erasable programmable logic device

A 19-ns 250-mW erasable programmable logic device using 1.2-μm n-well CMOS EPROM technology is described. CMOS EPROM technology and new circuit techniques give smaller die and lower power than SSI/MSI logic components without compromising speed. A novel cell current tracking, temperature-compensated sense amplifier is used to enhance performance and reduce power. The versatile macrocell makes the logic implementation simpler, and the EPROM technology gives improved programmability and reliability.