DocumentCode
901195
Title
Modeling of picosecond pulse propagation in microstrip interconnections of integrated circuits
Author
Goossen, Keith W. ; Hammond, Robert B.
Author_Institution
Los Alamos Nat. Lab., NM, USA
Volume
37
Issue
3
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
469
Lastpage
478
Abstract
Theoretical time-domain analyses of the dispersion and loss of square-wave and exponential pulses on microstrip transmission line interconnections on silicon integrated-circuit substrates, performed using the quasi-TEM approximation, are discussed. Geometric dispersion and conductor line width, as well as losses from conductor resistance, conductor skin effect, and substrate conductance, are considered over the frequency range from 100 MHz to 100 GHz. Results show the enormous significance of the substrate losses and demonstrate the need for substrate resistivities >10 Ω-cm for high-performance circuits. The results also show the effects of geometric dispersion for frequencies above 10 GHz, the unimportance of conductor skin-effect losses for frequencies up to 100 GHz, and the transition from a high-frequency regime where losses do not affect phase velocity to a low-frequency regime where the ratio of he conductor and substrate loss coefficients determines phase velocity
Keywords
dispersion (wave); microwave integrated circuits; skin effect; strip lines; 100 MHz to 100 GHz; Si; conductor line width; conductor resistance; conductor skin effect; dispersion; exponential pulses; geometric dispersion; high-frequency regime; integrated-circuit substrates; loss; low-frequency regime; microstrip interconnections; picosecond pulse propagation; quasi-TEM approximation; substrate conductance; substrate resistivities; transmission line interconnections; Conductors; Dispersion; Frequency; Integrated circuit interconnections; Microstrip; Propagation losses; Silicon; Skin effect; Time domain analysis; Transmission line theory;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.21616
Filename
21616
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