Title :
A 20 mW, 150 GHz InP HEMT MMIC power amplifier module
Author :
Samoska, Lorene ; Peralta, Alejandro ; Hu, Ming ; Micovic, Miro ; Schmitz, Adele
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; indium compounds; millimetre wave power amplifiers; 148 to 160 GHz; 20 mW; HEMT MMIC power amplifier module; InP; amplifier chip; high electron mobility transistor; monolithic millimeter-wave integrated circuit; output power; HEMTs; High power amplifiers; Indium phosphide; Integrated circuit packaging; Laboratories; MMICs; MODFETs; Millimeter wave integrated circuits; Power amplifiers; Propulsion;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.822575
