The Structure of Displacement Cascades in Silicon

We have extended the work of Mueller and Guenzer on the simulation of damage cascades in silicon. We considered the effects of modifying the energy cutoff and interparticle interaction that they used. We also examined the effect of finite temperature on channeling and of using an amorphous model for the silicon, rather than a crystalline model. An estimate of the maximum size of heavily damaged regions produced by neutron induced displacement damage cascades was made. The effects of high neutron fluence and of annealing are briefly discussed, as is the likehood of permanent device damage resulting from the displacement damage.