Title :
Electrically injected visible (639-661 nm) vertical cavity surface emitting laser
Author :
Lott, James A. ; Schneider, R.P.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
5/13/1993 12:00:00 AM
Abstract :
The first electrically injected visible InAlGaP/AlGaAs vertical cavity surface emitting lasers are reported. The devices consist of an InAlGaP optical cavity active region surrounded by AlAs/AlGaAs distributed Bragg reflectors. Pulsed room temperature lasing has been observed at wavelengths from 639 to 661 nm. At 650 nm, thresholds of 30 mA at 2.7 V were measured on test devices with a 20 mu m emission diameter. Peak output power exceeds 3.3 mW.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor lasers; 2.7 V; 3.3 mW; 30 mA; 639 to 661 nm; 650 nm; AlAs-AlGaAs; InAlGaP; InAlGaP-AlGaAs; distributed Bragg reflectors; optical cavity active region; pulsed laser; room temperature; thresholds; vertical cavity surface emitting laser; visible region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930555
