DocumentCode
901426
Title
Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers
Author
Lu, Hanh ; Blaauw, Case ; Makino, Toshihiko
Author_Institution
LASERTRON, Burlington, MA, USA
Volume
14
Issue
5
fYear
1996
fDate
5/1/1996 12:00:00 AM
Firstpage
851
Lastpage
859
Abstract
An approach for single mode operation of 1.3 μm distributed feedback (DFB) lasers with a large side mode suppression ratio over a wide temperature range of -40°C to 100°C, is reported. The lasers utilize an optimized strained-layer multiquantum well (MQW) active region in combination with index/gain-coupling and detuning effect. A high characteristic temperature T0 (90-100 K) was obtained in 1.3 μm InGaAsP/InP strained-layer MQW Fabry-Perot lasers when the number of QWs exceeded 10. In gain-coupled DFB lasers, a very low temperature dependence of the threshold current has been obtained when there is no detuning or positive detuning of the lasing wavelength at room temperature with respect to the material gain peak. An infinite T0 can be realized over certain temperature ranges, in which the threshold current exhibits a minimum, depending on the amount of detuning. The physical mechanism responsible for the appearance of this minimum, as well as the high side mode suppression ratio, are explained theoretically
Keywords
Debye temperature; III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser tuning; optical communication equipment; optical couplers; quantum well lasers; refractive index; μm InGaAsP/InP distributed feedback lasers; 1.3 mum; 90 to 100 K; DFB lasers; InGaAsP-InP; InGaAsP/InP strained-layer MQW Fabry-Perot lasers; MQW active region; detuning effect; gain-coupled DFB lasers; high characteristic temperature; high side mode suppression ratio; index/gain-coupling; large side mode suppression ratio; lasing wavelength; material gain peak; optimized strained-layer multiquantum well active region; physical mechanism; positive detuning; room temperature; single-mode operation; temperature ranges; threshold current; very low temperature dependence; wide temperature range; Distributed feedback devices; Fabry-Perot; Indium phosphide; Laser feedback; Laser modes; Optical materials; Quantum well devices; Temperature dependence; Temperature distribution; Threshold current;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.495167
Filename
495167
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