• DocumentCode
    901521
  • Title

    ZnO field-effect transistor

  • Author

    Jacobs, J.E.

  • Volume
    56
  • Issue
    11
  • fYear
    1968
  • Firstpage
    2094
  • Lastpage
    2095
  • Abstract
    Fabrication of experimental insulated-gate field-effect transistors on single crystal ZnO is described. Measured transconductance of 10 µmhos is two orders of magnitude smaller than that predicted for this structure by the Hall mobility of 220 cm2/V ċ s. Threshold voltage indicates relatively large values of surface states and/or insulator charge.
  • Keywords
    Cleaning; Delay; FETs; Filters; Insulation; Phase locked loops; Temperature distribution; Voltage; Voltage-controlled oscillators; Zinc oxide;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6813
  • Filename
    1448743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=901521