DocumentCode :
901532
Title :
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions
Author :
Lin, C.L. ; Farley, C.W. ; Seabury, C.W. ; Higgins, J.A. ; Kirchner, Peter D. ; Woodall, Jerry M. ; Asbeck, P.M.
Volume :
29
Issue :
10
fYear :
1993
fDate :
5/13/1993 12:00:00 AM
Firstpage :
850
Lastpage :
851
Abstract :
High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*1019 cm-3 were obtained, using CCl4 as the dopant source. Transistors with 2*10 mu m2 emitters achieved ft and fmax values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of fmax.
Keywords :
III-V semiconductors; carbon; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 76 GHz; 82 GHz; CCl 4; III-V semiconductors; InP-InGaAs:C; dopant source; double heterojunction bipolar transistors; gas source MBE; organic compounds; short period superlattice; superlattice graded base-collector junctions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930568
Filename :
216267
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=901532
بازگشت