DocumentCode
901538
Title
A proposed method for rapid determination of doping profiles in semiconductor layers
Author
Leenov, D. ; Stewart, R.G.
Volume
56
Issue
11
fYear
1968
Firstpage
2095
Lastpage
2096
Abstract
A procedure is proposed for determining the impurity atom profile on one side of a p-n junction from harmonic generation measurements. The analysis indicates that a series of determinations can be made without detailed point-by-point calculations. The ultimate resolution of the method is discussed.
Keywords
Cleaning; Conductivity; Crystals; Doping profiles; FETs; Insulation; Temperature distribution; Transconductance; Voltage; Zinc oxide;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6815
Filename
1448745
Link To Document