DocumentCode
901543
Title
Very broadband distributed amplifier to 75 GHz
Author
Braunstein, J. ; Tasker, P.J. ; Hülsmann, A. ; Schlechtweg, M. ; Köhler, K. ; Bronner, W. ; Haydl, W.
Author_Institution
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume
29
Issue
10
fYear
1993
fDate
5/13/1993 12:00:00 AM
Firstpage
851
Lastpage
853
Abstract
Distributed amplifiers were fabricated successfully with a gain of 8 dB+or-1 dB in the frequency range 5-75 GHz measured on-wafer. The associated input and output matching is better than -10 dB. To the authors´ knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.
Keywords
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 5 to 75 GHz; 7 to 9 dB; GaAs; MODFET; broadband distributed amplifier; coplanar waveguide technology; output matching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930569
Filename
216268
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