Title :
Very broadband distributed amplifier to 75 GHz
Author :
Braunstein, J. ; Tasker, P.J. ; Hülsmann, A. ; Schlechtweg, M. ; Köhler, K. ; Bronner, W. ; Haydl, W.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
5/13/1993 12:00:00 AM
Abstract :
Distributed amplifiers were fabricated successfully with a gain of 8 dB+or-1 dB in the frequency range 5-75 GHz measured on-wafer. The associated input and output matching is better than -10 dB. To the authors´ knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. The MMICs were realised in coplanar waveguide technology.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; microwave amplifiers; wideband amplifiers; 5 to 75 GHz; 7 to 9 dB; GaAs; MODFET; broadband distributed amplifier; coplanar waveguide technology; output matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930569
