Temperature Effects on Failure and Annealing Behavior in Dynamic Random Access Memories

Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finaly a description of the test instrumentation and irradiation procedures are given.