A Radiation-Hardened 1K-Bit Dielectrically Isolated Random Access Memory

This paper has presented the design, technology and results of a 1024 Bit Dielectrically Isolated Random Access Memory. Essentially all of the electrical parameter design goals have been met with adequate margin for process variations. Radiation data to date consists of total gamma dose and neutron fluence. Because of the dielectric isolation, this part should survive transient ionizing radiation of over 1012 Rad(Si)/sec and has been shown by testing to not upset below 109 Rad(Si)/sec.