Title :
Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects
Author :
Sin, Y.K. ; Horikawa, H. ; Matsui, Yusuke ; Kamijoh, T.
Author_Institution :
Oki Electric Industry Co. Ltd., Tokyo, Japan
fDate :
5/13/1993 12:00:00 AM
Abstract :
The authors report ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers entirely grown by a three step MOVPE process for computer interconnects. Uncoated 350 mu m-long buried heterostructure lasers show an extremely low laser threshold of 0.8 mA and a high slope efficiency of 0.41 mW/mA per facet both measured CW at RT, and a high relaxation oscillation frequency of 5.1 GHz at a bias current of 4 mA.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; laser beam applications; optical interconnections; semiconductor lasers; vapour phase epitaxial growth; 0.8 mA; 350 micron; 4 mA; 5.1 GHz; InGaAs-GaAs-InGaP; bias current; buried heterostructure; computer interconnects; high speed; optical interconnects; relaxation oscillation frequency; strained quantum well lasers; three step MOVPE process; ultralow laser threshold;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930583
