Title :
Proton damage effects in high performance P-channel CCDs
Author :
Spratt, James P. ; Conger, Chris ; Bredthauer, Richard ; Byers, Wheaton ; Groulx, Robert ; Leadon, Roland E. ; Clark, Henry
Author_Institution :
Full Circle Res. Inc., Redondo Beach, CA, USA
fDate :
4/1/2006 12:00:00 AM
Abstract :
P-channel CCDs with pre-rad imaging characteristics comparable to the best N-channel CCDs have been fabricated and tested. These devices have been subjected to proton damage and display the superior hardness predicted for them.
Keywords :
charge-coupled devices; proton effects; radiation hardening; semiconductor counters; charge transfer efficiency; hardness; p-channel CCD; prerad imaging characteristics; proton damage effects; Charge coupled devices; Charge transfer; Clocks; Delay effects; Displays; Image analysis; Life testing; Protons; Silicon; Temperature; Charge transfer efficiency; P-channel CCDs; displacement damage hardened imagers;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2006.874620
