A GaAs monolithic 6 GHz low-noise amplifier for satellite receivers

Author

Mott, Richard C.

Author_Institution

Comsat Lab., Clarksburg, MD, USA

Volume

37

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

565

Lastpage

570

Abstract

A design approach and accurate modeling techniques developed to realize a GaAs monolithic, 6-GHz, two-stage, low-noise amplifier (LNA) with a measured 1.7 dB noise figure and associated 21 dB gain are discussed. This self-biased LNA design, with chip dimensions of 80 mil×135 mil, utilizes an ion-implantation FET model which predicts measured in-band amplifier gain to within 0.5 dB and peak frequency response to within 4%. The derived noise parameter estimation process, which uses a Gaussian elimination technique to predict the measured noise figure to within 0.2 dB, reduces a set of complex, binomial equations to simple relationships which are easily programmable. A deep-recessed gate realization of this LNA design demonstrates that LNA low-noise performance is achievable under FET saturated drain current conditions

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; microwave amplifiers; satellite relay systems; 1.7 dB; 21 dB; 6 GHz; GaAs; Gaussian elimination technique; binomial equations; chip dimensions; deep-recessed gate realization; in-band amplifier gain; ion-implantation FET model; low-noise amplifier; modeling techniques; noise parameter estimation process; peak frequency response; satellite receivers; saturated drain current conditions; self-biased LNA design; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Low-noise amplifiers; Noise figure; Noise measurement; Predictive models; Satellites; Semiconductor device measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.21629

Filename

21629